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Proceedings Paper

Quantum light generation with a semiconductor quantum dot
Author(s): R. J. Young; D. J. P. Ellis; M. R. Stevenson; A. J. Bennett; P. Atkinson; K. Cooper; D. A. Ritchie; A. J. Shields
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Paper Abstract

We discuss recent progress using the radiative emission of single quantum dots as a triggered source of both single photons, and photon pairs displaying polarization entanglement. Excitation of a quantum dot with two electrons and two holes leads to the emission of a pair of photons. We show that, provided the spin splitting of the intermediate exciton state in the decay is erased, the photon pair is emitted in an entangled polarization state. Using quantum dots to generate quantum light has the advantage of allowing a robust and compact source to be realised with contacts for electrical injection. A cavity may be integrated into the semiconductor structure to enhance the photon collection efficiency and control the recombination dynamics. We detail a process to form a sub-micron current aperture within the device, allowing single quantum dots to be addressed electrically.

Paper Details

Date Published: 7 February 2007
PDF: 12 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64681G (7 February 2007); doi: 10.1117/12.717240
Show Author Affiliations
R. J. Young, Toshiba Research Europe Ltd. (United Kingdom)
D. J. P. Ellis, Toshiba Research Europe Ltd. (United Kingdom)
Cavendish Lab. (United Kingdom)
M. R. Stevenson, Toshiba Research Europe Ltd. (United Kingdom)
A. J. Bennett, Toshiba Research Europe Ltd. (United Kingdom)
P. Atkinson, Cavendish Lab. (United Kingdom)
K. Cooper, Cavendish Lab. (United Kingdom)
D. A. Ritchie, Cavendish Lab. (United Kingdom)
A. J. Shields, Toshiba Research Europe Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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