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Proceedings Paper

Comparison of the simulation and experiments of the nitride-based UV light emitting diodes
Author(s): K. Iida; H. Watanabe; K. Takeda; T. Nagai; T. Sumii; K. Nagamatsu; K. Balakrishnan; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki; A. Bandoh
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Paper Abstract

In attempt to prepare a high performance AlxGa1-xN based UV-B LED, a computer simulation has been performed on a typical UV-LED structure to find out the effect of threading dislocations on non-radiative recombination process. UVB LED structures were formed on using GaN and AlN based layers for comparison. Cracks were generated in the device structure formed on GaN underlayer. No cracks were observed on the device structure formed on AlN under layer. Much better structure was formed when the base AlN was grown by high temperature MOVPE.

Paper Details

Date Published: 6 February 2007
PDF: 9 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680R (6 February 2007); doi: 10.1117/12.717174
Show Author Affiliations
K. Iida, Meijo Univ. (Japan)
H. Watanabe, Meijo Univ. (Japan)
K. Takeda, Meijo Univ. (Japan)
T. Nagai, Meijo Univ. (Japan)
T. Sumii, Meijo Univ. (Japan)
K. Nagamatsu, Meijo Univ. (Japan)
K. Balakrishnan, Meijo Univ. (Japan)
M. Iwaya, Meijo Univ. (Japan)
S. Kamiyama, Meijo Univ. (Japan)
H. Amano, Meijo Univ. (Japan)
I. Akasaki, Meijo Univ. (Japan)
A. Bandoh, Showa-Denko K.K. (Japan)

Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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