The use of Micro-Electro-Mechanical Systems (MEMS) technology in mechanical, biotechnology, optical, communications, and ink jet is growing. Critical dimensions in MEMS devices are getting smaller and processes are constantly facing new metrology challenges. This paper will examine some critical dimension metrology needs and challenges for MEMS using resist-on-silicon structures. It is shown that the use of automated optical CD metrology can meet emerging measurement requirements while bringing the advantages of a non-destructive, high throughput and precise methodology.

Date Published: 5 April 2007
PDF: 6 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184W (5 April 2007); doi: 10.1117/12.716690

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)