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Proceedings Paper

Microcharacterization of spectral memory materials using nuclear forward scattering
Author(s): Aras Konjhodzic; Zameer Hasan; Esen Ercan Alp
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Paper Abstract

In the past europium doped materials have been tailored in our group, which could exhibit the highest spectral storage densities known to date. In these materials, europium exists in both doubly and triply ionized states. Therefore, it is necessary to control the relative concentration of Eu2+ and Eu3+. Due to accidental overlap of Eu2+ and Eu3+ optical transitions in this medium optical spectroscopy cannot be used to determine their relative concentration. For highly enriched europium samples, such a ratio can be determined by Mössbauer spectroscopy. However, at very low concentrations of the order of 0.01% of Eu in MgS that are necessary for these materials, conventional Mössbauer spectroscopy requires prohibitively long data acquisition times. In this article, we present and compare the ways of solving this problem with conventional and the time domain Mössbauer spectroscopy using Nuclear Forward Scattering. The synchrotron of the Advanced Photon Source at Argonne National Laboratory has been used as the source of high intensity, coherent and monochromatic gamma rays in NFS experiments. It is shown that in time domain Mössbauer spectroscopy the data acquisition times can be reduced by two orders of magnitude or more. This is of paramount importance for Mössbauer spectroscopy of very small samples or the samples with very low concentrations of the active isotope.

Paper Details

Date Published: 26 February 2007
PDF: 8 pages
Proc. SPIE 6482, Advanced Optical and Quantum Memories and Computing IV, 648208 (26 February 2007); doi: 10.1117/12.716392
Show Author Affiliations
Aras Konjhodzic, Temple Univ. (United States)
Zameer Hasan, Temple Univ. (United States)
Esen Ercan Alp, Argonne National Lab. (United States)

Published in SPIE Proceedings Vol. 6482:
Advanced Optical and Quantum Memories and Computing IV
Zameer U. Hasan; Alan E. Craig; Selim M. Shahriar; Hans J. Coufal, Editor(s)

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