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Proceedings Paper

The rational design of polymeric EUV resist materials by QSPR modelling
Author(s): Kevin Jack; Heping Liu; Idriss Blakey; David Hill; Wang Yueh; Heidi Cao; Michael Leeson; Greg Denbeaux; Justin Waterman; Andrew Whittaker
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Paper Abstract

We present the initial results of the development of a qualitative structure property relationship (QSPR) model to guide in the design and synthesis of high-sensitivity, non-CAR materials for EUV lithography. The model was developed using the fragmentation data of low molecular weight species at 70 eV using a mass spectrometer (MS) with an electron ionization source as the input parameter. The preliminary model has highlighted a number of structural elements which will be important in the future design of resists, however, limitations with the current set of input data for molecules which fragment readily have been identified and these are currently being addressed. Additionally, a correlation between &ggr; (1 MeV) and EUV (92 eV) radiolysis of selected polymers has been established and it is proposed that the higher energy (1 MeV) irradiation source is a suitable model process for EUV and can, therefore, be used in the future screening of polymeric materials.

Paper Details

Date Published: 6 April 2007
PDF: 8 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193Z (6 April 2007); doi: 10.1117/12.716213
Show Author Affiliations
Kevin Jack, The Univ. of Queensland (Australia)
Heping Liu, The Univ. of Queensland (Australia)
Idriss Blakey, The Univ. of Queensland (Australia)
David Hill, The Univ. of Queensland (Australia)
Wang Yueh, Intel Corp. (United States)
Heidi Cao, Intel Corp. (United States)
Michael Leeson, Intel Corp. (United States)
Greg Denbeaux, Univ. at Albany (United States)
Justin Waterman, Univ. at Albany (United States)
Andrew Whittaker, The Univ. of Queensland (Australia)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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