Proceedings Paper
Köhler illumination analysis for high-resolution optical metrology using 193 nm light| Format | Member Price | Non-Member Price |
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Paper Abstract
Dependence of Köhler factor 2 (KF 2: angular homogeneity) and Köhler factor 3 (KF 3: wavefront homogeneity) on the
intensity profile of line target was investigated for an optical system designed for high-resolution optical metrology using
ArF excimer laser of a wavelength of 193 nm. The intensity profiles for the isolated and multiple lines of 60 nm
linewidth were simulated based on the diffraction propagation by introducing the changes of NA (KF 2) and aberrations
such as defocus and coma (KF 3) to the illumination beam. From the results it was demonstrated that the intensity
profiles for the line targets were influenced by the change of the illumination condition, being distorted in shape and
magnitude.
Paper Details
Date Published: 13 April 2007
PDF: 7 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184V (13 April 2007); doi: 10.1117/12.714890
Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)
PDF: 7 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184V (13 April 2007); doi: 10.1117/12.714890
Show Author Affiliations
Yeungjoon Sohn, National Institute of Standards and Technology (United States)
Richard M. Silver, National Institute of Standards and Technology (United States)
Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)
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