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Proceedings Paper

Early look into device level imaging with beyond water immersion
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Paper Abstract

The lithography prognosticator of the early 1980's declared the end of optics for sub-0.5&mgr;m imaging. However, significant improvements in optics, photoresist and mask technology continued through the mercury lamp lines (436, 405 & 365nm) and into laser bands of 248nm and to 193nm. As each wavelength matured, innovative optical solutions and further improvements in photoresist technology have demonstrated that extending imaging resolution is possible thus further reducing k1. Several author have recently discussed manufacturing imaging solutions for sub-0.3k1 and the integration challenges. Our industry will continue to focus on the most cost effective solution. What continues to motivate lithographers to discover new and innovative lithography solutions? The answer is cost. Recent publications have demonstrated sub 0.30 k1 imaging. The development of new tooling, masks and even photoresist platforms impacts cost. The switch from KrF to ArF imaging materials has a significant impact on process integration. This paper will focus on the usefulness of beyond water immersion for 22nm logic node. Data will be presented demonstrating the impact of higher refractive index photoresist systems have on the further extension of ArF Immersion.

Paper Details

Date Published: 2 April 2007
PDF: 9 pages
Proc. SPIE 6520, Optical Microlithography XX, 65201L (2 April 2007); doi: 10.1117/12.714341
Show Author Affiliations
Will Conley, Freescale Semiconductor, Inc. (France)
Scott Warrick, Freescale Semiconductor, Inc. (France)
Cesar Garza, Freescale Semiconductor, Inc. (United States)
Pierre-Jerome Goirand, ST Microeletronics (France)
Jan-Willem Gemmink, NXP (France)
David Van Steenwinckel, NXP Research (Belgium)

Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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