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Proceedings Paper

High-temperature silicon evanescent lasers
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Paper Abstract

We present an electrically pumped silicon evanescent laser that utilizes a silicon waveguide and offset AlGaInAs quantum wells. The silicon waveguide is fabricated on a Silicon-On-Insulator (SOI) wafer and is bonded with the AlGaInAs quantum well structure using low temperature O2 plasma-assisted wafer bonding. The optical mode in the hybrid waveguide is predominantly confined in the passive silicon waveguide and evanescently couples into the III-V active region providing optical gain via electrical current injection. The device lases continuous wave at 1577 nm with a threshold of 65 mA at 15 °C. The maximum single-sided fiber-coupled cw output power is 1.8 mW. The maximum operating temperature is 40 °C mainly limited by a high series resistance of the device. Operation up to 60 °C should be achievable by lowering the series resistance and thermal impedance.

Paper Details

Date Published: 26 February 2007
PDF: 8 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648515 (26 February 2007); doi: 10.1117/12.714274
Show Author Affiliations
John E. Bowers, Univ. of California, Santa Barbara (United States)
Hyundai Park, Univ. of California, Santa Barbara (United States)
Alexander W. Fang, Univ. of California, Santa Barbara (United States)
Richard Jones, Intel Corp. (United States)
Oded Cohen, Intel Corp. (Israel)
Mario J. Paniccia, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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