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Proceedings Paper

Monolithic integrated ring resonator Raman silicon laser and amplifier
Author(s): Haisheng Rong; Shengbo Xu; Yin-Hao Kuo; Vanessa Sih; Oded Cohen; Omri Raday; Mario Paniccia
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Paper Abstract

We present a chip-scale ring resonator Raman silicon laser and amplifier based on a silicon-on-insulator rib waveguide with an integrated p-i-n diode structure. The laser cavity consists of a race-track shaped ring resonator connected to a straight bus waveguide via a directional coupler which couples both pump and signal laser light into and out of the cavity. The optical propagation loss of the ring resonator is reduced to <0.3 dB/cm on average and the effective free carrier lifetime in the waveguide can be shortened to <1 ns under reverse biasing, which efficiently reduces the nonlinear loss due to two-photon absorption induced free carrier absorption. We achieve continuous-wave, single-mode lasing with threshold of <20 mW and slope efficiency of >23%. Based on the same ring resonator architecture, we build a compact, chip-scale Raman amplifier that takes advantage of the cavity enhancement effect to lower the pump power and reduce the device size. We achieve over 3 dB amplification with 3 times less pump power in a 3 cm ring resonator compared to a straight waveguide of the same length. Our experimental results agree with simulations. The ring resonator based laser and amplifier can be integrated on chip with other silicon photonics components to provide a monolithic integrated photonic device.

Paper Details

Date Published: 8 February 2007
PDF: 8 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648511 (8 February 2007); doi: 10.1117/12.714210
Show Author Affiliations
Haisheng Rong, Intel Corp. (United States)
Shengbo Xu, Intel Corp. (United States)
Yin-Hao Kuo, Intel Corp. (United States)
Vanessa Sih, Intel Corp. (United States)
Oded Cohen, Intel Corp. (Israel)
Omri Raday, Intel Corp. (Israel)
Mario Paniccia, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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