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Inductively coupled plasma etching of ZnO
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Paper Abstract

The etching characteristics of ZnO epitaxial layers in Oxford Plasmalab 100 ICP 180 and 380 systems are investigated. Etch rates are studied as a function of gas composition, ICP power and RF bias power. Surface profilometry and scanning electron microscopy are used to characterize etch rates and surface morphologies. Highlights from other recently published results are also discussed.

Paper Details

Date Published: 20 February 2007
PDF: 4 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64740P (20 February 2007); doi: 10.1117/12.714048
Show Author Affiliations
Karen J. Nordheden, Univ. of Kansas (United States)
Mark Dineen, Oxford Instruments Plasma Technology (United Kingdom)
Colin Welch, Oxford Instruments Plasma Technology (United Kingdom)

Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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