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Proceedings Paper

Studies of interfacial optical and electrical properties on dielectric/ZnO systems
Author(s): R. S. Wang; H. C. Ong
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Paper Abstract

The thermal stability of AlOx and MgOx on ZnO films has been studied by using photoluminescence, cathodoluminescence and current-voltage measurements. It is found that the interfaces degrade significantly upon thermal annealing, which are evident by the reduction of the band-edge emission as well as the increase of conductance with annealing temperature and duration. By using secondary ion mass spectroscopy and diffusion model, the dependence of luminescence on thermal treatment can be well simulated and the degradation of oxide/ZnO can be attributed to the out-diffusion of Zn into the oxide layer from ZnO. Our studies point out the importance of developing appropriate diffusion barrier for the fabrication of low temperature processed ZnO transistors.

Paper Details

Date Published: 20 February 2007
PDF: 9 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647410 (20 February 2007); doi: 10.1117/12.714023
Show Author Affiliations
R. S. Wang, The Chinese Univ. of Hong Kong (Hong Kong China)
H. C. Ong, The Chinese Univ. of Hong Kong (Hong Kong China)


Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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