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Proceedings Paper

III-nitride avalanche photodiodes
Author(s): Patrick Kung; Ryan McClintock; Jose Luis Pau Vizcaino; Kathryn Minder; Can Bayram; Manijeh Razeghi
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Paper Abstract

Wide bandgap III-Nitride semiconductors are a promising material system for the development of ultraviolet avalanche photodiodes (APDs) that could be a viable alternative to photomultiplier tubes. In this paper, we report the epitaxial growth and physical properties of device quality GaN layers on high quality AlN templates for the first backilluminated GaN p-i-n APD structures on transparent sapphire substrates. The 25 μm x 25 μm device characteristics were measured, and compared with the same devices grown on GaN templates, under low bias and linear mode avalanche operation where they exhibited gains near 1500 after undergoing avalanche breakdown. The breakdown electric field in GaN was determined to be 2.73 MV/cm. The hole impact ionization coefficients were shown to be greater than those of electrons. These APDs were also successfully operated under Geiger mode.

Paper Details

Date Published: 2 February 2007
PDF: 12 pages
Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64791J (2 February 2007); doi: 10.1117/12.713774
Show Author Affiliations
Patrick Kung, Northwestern Univ. (United States)
Ryan McClintock, Northwestern Univ. (United States)
Jose Luis Pau Vizcaino, Northwestern Univ. (United States)
Kathryn Minder, Northwestern Univ. (United States)
Can Bayram, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 6479:
Quantum Sensing and Nanophotonic Devices IV
Manijeh Razeghi; Gail J. Brown, Editor(s)

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