Proceedings Paper
Recent results from the Berkeley 0.3-NA EUV microfield exposure tool| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
Operating as a SEMATECH resist test center, the Berkeley 0.3-NA EUV microfield exposure tool continues to play a
crucial role in the advancement of EUV resists and masks. Here we present recent resist-characterization results from the
tool as well as tool-characterization data. In particular we present lithographic-based aberration measurements
demonstrating the long-term stability of the tool. We also describe a recent upgrade to the tool which involved redesign
of the programmable coherence illuminator to provide improved field uniformity as well as a programmable field size.
Paper Details
Date Published: 15 March 2007
PDF: 8 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170V (15 March 2007); doi: 10.1117/12.713440
Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)
PDF: 8 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170V (15 March 2007); doi: 10.1117/12.713440
Show Author Affiliations
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Chris N. Anderson, Univ. of California/Berkeley (United States)
Kim Dean, SEMATECH (United States)
Paul Denham, Lawrence Berkeley National Lab. (United States)
Chris N. Anderson, Univ. of California/Berkeley (United States)
Kim Dean, SEMATECH (United States)
Paul Denham, Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Brian Hoef, Lawrence Berkeley National Lab. (United States)
Bruno La Fontaine, Advanced Micro Devices (United States)
Tom Wallow, Advanced Micro Devices (United States)
Brian Hoef, Lawrence Berkeley National Lab. (United States)
Bruno La Fontaine, Advanced Micro Devices (United States)
Tom Wallow, Advanced Micro Devices (United States)
Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)
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