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Proceedings Paper

OCD metrology by floating n/k
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Paper Abstract

In this paper, one of the major contributions to the OCD metrology error, resulting from within-wafer variation of the refractive index/extinction coefficient (n/k) of the substrate, is identified and quantified. To meet the required metrology accuracy for the 65-nm node and beyond, it is suggested that n/k should be floating when performing the regression for OCD modeling. A feasible way of performing such regression is proposed and verified. As shown in the presented example, the measured CDU (3σ) with n/k fixed and n/k floating is 1.94 nm and 1.42 nm, respectively. That is, the metrology error of CDU committed by assuming n/k fixed is more than 35% of the total CDU.

Paper Details

Date Published: 5 April 2007
PDF: 8 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65183C (5 April 2007); doi: 10.1117/12.713341
Show Author Affiliations
Shinn-Sheng Yu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jacky Huang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chih-Ming Ke, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tsai-Sheng Gau, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Burn J. Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Lawrence Lane, Timbre Technologies, Inc. (United States)
Vi Vuong, Timbre Technologies, Inc. (United States)
Yan Chen, Timbre Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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