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Proceedings Paper

Electrical characteristics of n-ZnO/n-6H-SiC heterostructures grown by rf-sputtering
Author(s): Ya. I. Alivov; B. Xiao; Q. Fan; D. Johnstone; C. W. Litton; H. Morkoç
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Paper Abstract

The conduction band offset of n-ZnO/n-6H-SiC heterostructures prepared by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements led to conduction band offsets of 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Paper Details

Date Published: 20 February 2007
PDF: 4 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64740F (20 February 2007); doi: 10.1117/12.713217
Show Author Affiliations
Ya. I. Alivov, Virginia Commonwealth Univ. (United States)
B. Xiao, Virginia Commonwealth Univ. (United States)
Q. Fan, Virginia Commonwealth Univ. (United States)
D. Johnstone, SEMETROL (United States)
C. W. Litton, Air Force Research Lab. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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