
Proceedings Paper
Leveraging LER to minimize linewidth measurement uncertainty in a calibration exerciseFormat | Member Price | Non-Member Price |
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Paper Abstract
Many semiconductor metrologists are aware that line edge roughness (LER), and thus linewidth variation (LWV), can
be a significant contributor to measurement uncertainty. More generally, the impact of measurand variation and proper
sampling is becoming a major player in nearly every area of semiconductor metrology. This paper describes a simple
technique of using the LWV of a feature as a fingerprint to uniquely characterize the measurement target in such a way
to make the LER contribution negligible in a linewidth calibration exercise. A single crystal critical dimension
reference material (SCCDRM) was the calibration artifact used to calibrate the tip width of a critical dimension atomic
force microscope (CD-AFM). These samples were released by the National Institute of Standards and Technology
(NIST) to SEMATECH member companies in 2004. The specific SCCDRM used for this work had six calibrated
linewidths ranging from 100 nm to 270 nm. Our paper shows in detail the overlay of the CD-AFM linewidth data with
that of the data used to calibrate the SCCDRM for each linewidth. With the aid of this linewidth fingerprinting, Mandel
regression is used to assess the quality of correlation of the CD-AFM to that of the NIST-derived calibration data. An
uncertainty budget is presented as a conclusion of the tip width calibration exercise. A combined expanded uncertainty
of less than 2 nm with a k = 3 coverage factor is achieved.
Paper Details
Date Published: 5 April 2007
PDF: 15 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184T (5 April 2007); doi: 10.1117/12.713101
Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)
PDF: 15 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184T (5 April 2007); doi: 10.1117/12.713101
Show Author Affiliations
Ronald Dixson, National Institute of Standards and Technology (United States)
Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)
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