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Proceedings Paper

Non-linear methods for overlay control
Author(s): Michiel Kupers; Dongsub Choi; Boris Habets; Geert Simons; Erik Wallerbos
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Paper Abstract

Overlay requirements for DRAM devices are decreasing faster than anticipated. With current methods overlay becomes ever harder to control and therefore novel techniques are needed. This paper will present an alignment based method to address this issue. The use and impact of several non-linear alignment models will be presented. Issues here include the number of alignment marks to use and how to distribute them over the wafer in order to minimize the throughput impact while at the same time providing maximum wafer coverage. Integrating this method into a R2R environment strongly depends on the stability of the process. Advantages and disadvantages of the method will be presented as well as experimental results. Finally some comments will be given on the need and feasibility of wafer by wafer corrections.

Paper Details

Date Published: 5 April 2007
PDF: 6 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184S (5 April 2007); doi: 10.1117/12.713092
Show Author Affiliations
Michiel Kupers, Qimonda Dresden GmbH and Co. OHG (Germany)
Dongsub Choi, Qimonda Dresden GmbH and Co. OHG (Germany)
Boris Habets, Qimonda Dresden GmbH and Co. OHG (Germany)
Geert Simons, ASML Netherlands B.V. (Netherlands)
Erik Wallerbos, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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