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Proceedings Paper

The study to enhance the mask global CD uniformity by removing local CD variation
Author(s): Yongkyoo Choi; Munsik Kim; Oscar Han
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Paper Abstract

As pattern size is shrinking, required mask CD specification is tighter and its effect on wafer patterning is more severe. Recent study showed that the effect of mask local CD variation of mask on wafer is much smaller than that of global CD variation.[1] To enhance the device performance, wafer CD uniformity should be enhanced and controlled by mask global CD uniformity. Mask global CD uniformity usually can be enhanced by mask process and optimal fogging effect correction. To enhance the mask global CD uniformity on mask, resist process and FEC (Fogging Effect Correction), reliable CD measurement tool and methods are necessary. Recently, group CD using OCD(Spectroscopic Ellipsometer) or AIMS(Aerial Image Measurement and Simulation) or polynomial fitting method is introduced to represent global CD variation on mask.[2][3][4] These methods are removing local CD variation on mask. The local CD variation will be remained as residual CD after approximation. In this paper, local CD variation of mask and wafer is evaluated and 2 kinds of methods are used to measure CD on mask and wafer, and the correlation of global CD of mask and field CD of wafer are evaluated. And the repeatability of field to field CD uniformity of wafer is evaluated to correct the fields CD uniformity of wafer by controlling the selective changing of transmittance of mask or to feed back to mask process. Higher correlation between fields of wafer, more accurate correction can be possible.

Paper Details

Date Published: 5 April 2007
PDF: 8 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65183E (5 April 2007);
Show Author Affiliations
Yongkyoo Choi, Hynix Semiconductor (South Korea)
Munsik Kim, Hynix Semiconductor (South Korea)
Oscar Han, Hynix Semiconductor (South Korea)

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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