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Proceedings Paper

Development of advanced mask inspection optics with transmitted and reflected light image acquisition
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Paper Abstract

The lithography potential of an ArF (193nm) laser exposure tool with high numerical aperture (NA) will expand its lithography potential to 65nm node production and even beyond. Consequently, a mask inspection system with a light source, whose wavelength is nearly equal to 193nm, is required so as to detect defects of the masks using resolution enhancement technology (RET). Wavelength consistency between exposure tool and mask inspection tool is strongly required in the field of mask fabrication to obtain high defect inspection sensitivity. Therefore, a novel high-resolution mask inspection platform using DUV wavelength has been developed, which works at 198.5nm. This system has transmission and reflection inspection mode, and throughput using 70nm pixel size were designed within 2 hours per mask. In this paper, transmitted and reflected light image acquisition system and high accuracy focus detection optics are presented.

Paper Details

Date Published: 5 April 2007
PDF: 8 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65181U (5 April 2007); doi: 10.1117/12.712774
Show Author Affiliations
Ryoichi Hirano, Advanced Mask Inspection Technology, Inc. (Japan)
Riki Ogawa, Advanced Mask Inspection Technology, Inc. (Japan)
Hitoshi Suzuki, Advanced Mask Inspection Technology, Inc. (Japan)
Kenichi Takahara, Advanced Mask Inspection Technology, Inc. (Japan)
Yoshitake Tsuji, Advanced Mask Inspection Technology, Inc. (Japan)
Shingo Murakami, Advanced Mask Inspection Technology, Inc. (Japan)
Nobutaka Kikuiri, Advanced Mask Inspection Technology, Inc. (Japan)
Kinya Usuda, Advanced Mask Inspection Technology, Inc. (Japan)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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