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Characterization of capacitive 3D deep trench mask open structures using scatterometry
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Paper Abstract

A non-destructive and fast optical solution for characterization of 3D deep trench mask open structures containing two holes per unit cell is presented. It is discussed that measurement sensitivity depends on wafer orientation. A weighted reference measurement system using data from scatterometry combined with CD-SEM and CD-AFM techniques after HF removal of the top BSG layer demonstrates adequate performance of scatterometry for high aspect ratio 3D process control implementations. For example the BCD major and minor axis scatterometry total measurement uncertainty values are about a factor 2 better than the corresponding results obtained using CD-SEM and CD-AFM. While scatterometry data exhibit close to unity slope for both TCD and BCD, corresponding CD-SEM and CD-AFM performances show significantly stronger dependence on depth. Hence, Scatterometry sensitivity to CD variation is less depth sensitive which is a preferred high volume manufacturing property.

Paper Details

Date Published: 5 April 2007
PDF: 9 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651827 (5 April 2007);
Show Author Affiliations
Shahin Zangooie, IBM Microelectronics (United States)
Pedro Herrera, KLA-Tencor (United States)
Abebe Mesfin, IBM Microelectronics (United States)
Chas Archie, IBM Microelectronics (United States)
Matthew Sendelbach, IBM Microelectronics (United States)

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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