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Proceedings Paper

Use of in-line AFM as LWR verification tool in 45nm process development
Author(s): Ming Hsun Hsieh; Kun Ho Shi; J. H. Yeh; Ruei Hung Hsu; Mingsheng Tsai; S. F. Tzou
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Paper Abstract

As critical dimensions shrink to fit advanced process generation requirements, line width roughness (LWR) has become more and more important. As design rules for semiconductor devices shrink, the line width roughness approaches the CD of the line itself. This leads to poor device performance or even device failure. Thus, an accurate process monitor for LWR is required. CD-SEM measurements for LWR require a reference to verify the accuracy. TEM has traditionally played this role. However, its destructive nature, the errors induced by sample preparation, the limited data output and long turnaround time make routine TEM measurement undesirable. CD-AFM is a non-destructive technique that is able to generate highly accurate three-dimensional profiles of a sample surface over tens of microns in the X and Y directions with sub-nanometer resolution. In this paper we present results that show strong correlation between CD-SEM, TEM and inline CD-AFM based on measurements of an OPC grating. Based on these results, CD-AFM has successfully replaced TEM as the reference tool of choice for the R&D stage of a 45nm generation process. To improve this situation, we have successfully adopted in-line X3D AFM to replace FA TEM as the verification tool in the R&D stage of a 45nm generation process.

Paper Details

Date Published: 5 April 2007
PDF: 6 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651833 (5 April 2007); doi: 10.1117/12.712537
Show Author Affiliations
Ming Hsun Hsieh, United Microelectronics Corp. (Taiwan)
Kun Ho Shi, United Microelectronics Corp. (Taiwan)
J. H. Yeh, United Microelectronics Corp. (Taiwan)
Ruei Hung Hsu, United Microelectronics Corp. (Taiwan)
Mingsheng Tsai, United Microelectronics Corp. (Taiwan)
S. F. Tzou, United Microelectronics Corp. (Taiwan)

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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