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Proceedings Paper

CAD-based line/space mix-up prevention for reticle metrology
Author(s): Thomas Marschner; Maik Enger; Frank Ludewig; Reuven Falah; Sergey Latinsky; Ofer Lindman; Thomas Coleman
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Paper Abstract

This paper describes a method to automatically distinguish between line and space for 1:1 line space patterns in mask metrology. As the number of measurements typically performed on a reticle is significantly higher than on a wafer, automated CAD based CD-SEM recipe creation is essential. Such recipes typically use synthetic pattern recognition targets instead of SEM based pattern recognition targets. Therefore, a possible different contrast between lines and spaces on a mask cannot be utilized for distinguishing lines from spaces. We demonstrate an algorithm solution based on the analysis of the SEM waveform profiles to identify potential L/S mix-ups and correct them automatically. The solution allows fully automated CAD based offline recipe creation with a high success rate of distinction between lines and spaces for 1:1 pitch cases without the necessity of editing recipes on the tool in advance of performing the measurements.

Paper Details

Date Published: 5 April 2007
PDF: 8 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65181W (5 April 2007); doi: 10.1117/12.712523
Show Author Affiliations
Thomas Marschner, Advanced Mask Technology Ctr. (Germany)
Maik Enger, Advanced Mask Technology Ctr. (Germany)
Frank Ludewig, Advanced Mask Technology Ctr. (Germany)
Reuven Falah, Applied Materials (Israel)
Sergey Latinsky, Applied Materials (Israel)
Ofer Lindman, Applied Materials (Israel)
Thomas Coleman, Applied Materials (Israel)

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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