A new algorithm for SEM CD evaluation of trapezoidal line structures is presented. It is based on the physical modeling of SEM image formation and allows the assignment of top and bottom structural edge positions to the SEM signal. The SEM image profile is described by a set of piecewise continuous functions which is convoluted with the electron probe intensity profile. The resulting function is fitted to the measured signal profile by a least squares algorithm. The fit returns both top and bottom edge positions as well as the electron probe diameter. The algorithm is verified against three different Monte Carlo simulation programs using different physical models of elastic and inelastic electron scattering and secondary electron generation and transport. The effect of the physical modeling on the evaluated critical dimension is discussed and the absolute CD deviation of the algorithm is determined for different sets of specimen and tool parameters like edge slope angle, beam energy, and electron probe diameter.

Date Published: 5 April 2007
PDF: 12 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184P (5 April 2007); doi: 10.1117/12.712503

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)