We analyzed substrate current signal of flash memory with floating and control gates using EB-Scope for the measurement of bottom CD. We showed that the signals come from capacitance structure of the floating and control gates. From this analysis, we showed we can get the information of electrical characteristics of floating and control gates such as capacitance, resistance and time constant as well as the bottom CD of flash memory with floating and control gates. This technique form this analysis can contribute yield enhancement in flash memory manufacturing process by in-situ monitoring.

Date Published: 6 April 2007
PDF: 8 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65182T (6 April 2007); doi: 10.1117/12.712477

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)