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Proceedings Paper

Characteristics and prevention of pattern collapse in EUV lithography
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Paper Abstract

Pattern collapse for line widths under 32 nm printed by extreme ultra-violet lithography (EUVL) is investigated by using commercial tools. Pattern collapse phenomenon occurs very often in actual process. Pattern collapse means that pattern is bending, peel-off, and break of the resist, thus it affects the production and yield of semiconductor. In this paper, we newly defined and investigated the critical aspect ratio. Pattern collapse happens if the critical aspect ratio is smaller than aspect ratio. Because EUV resist has smaller adhesive strength than currently available DUV and ArF resists, EUV resist easily collapse more easily than DUV resist does. This phenomenon is successfully modeled.

Paper Details

Date Published: 21 March 2007
PDF: 7 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65172S (21 March 2007); doi: 10.1117/12.712469
Show Author Affiliations
Wook Chang, Hanyang Univ. (South Korea)
Eun-Jin Kim, Hanyang Univ. (South Korea)
Young-Min Kang, Hanyang Univ. (South Korea)
Seung-Wook Park, Hanyang Univ. (South Korea)
Chang-Moon Lim, Hynix Semiconductor Inc. (South Korea)
Ki-Tak Won, Seoul National Univ. (South Korea)
Jai-Soon Kim, Seoul National Univ. (South Korea)
Hye-Keun Oh, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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