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Proceedings Paper

Novel low-reflective index fluoropolymers-based top anti-reflective coatings (TARC) for 193-nm lithography
Author(s): Tsuneo Yamashita; Takashi Hayami; Takuji Ishikawa; Takashi Kanemura; Hirokazu Aoyama
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Paper Abstract

Implant lithography, which has up to now utilized 365-nm (i-line) and 248-nm (KrF) light sources, must now turn to 193-nm (ArF) sources. In implant lithography, an anti-reflective material is often used to coat the resist-film. The top anti-reflective coating (abbreviated to TARC) is most often used to reduce CD swing. TARC materials must have low refractive index and water solubility. The TARC materials for used 193-nm use must have very low reflective index and alternatives to perfluorooctylsulfonic acid (PFOS) and perfluorooctanoic acid (PFOA) must be found. We synthesized some novel fluorinated amorphous polymers as 193-nm TARC candidates. Their fundamental properties were characterized, such as transparency and reflective index at 193-nm (wavelength) along with their solubility in water and a standard alkaline developer. High transparency, i.e., k value less than 0.01, and very low reflective index, i.e., lower than n=1.4 at 193-nm wavelength are confirmed. Their dissolution behaviors are studied using the Quartz Crystal Microbalance (QCM) method. In surprise finding, we find that several of the polymers examined, those that have high fluorine content, dissolved in water. Test results show that the proposed polymers can be applied as top anti reflective coatings .

Paper Details

Date Published: 30 March 2007
PDF: 9 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192U (30 March 2007); doi: 10.1117/12.712414
Show Author Affiliations
Tsuneo Yamashita, Daikin Industries, Ltd. (Japan)
Takashi Hayami, Daikin Industries, Ltd. (Japan)
Takuji Ishikawa, Daikin Industries, Ltd. (Japan)
Takashi Kanemura, Daikin Industries, Ltd. (Japan)
Hirokazu Aoyama, Daikin Industries, Ltd. (Japan)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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