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Proceedings Paper

Photoresist dissolution into a CO2 compatible salt and CO2 solution: Investigation of Processing Conditions
Author(s): Amy E. Zweber; Mark Wagner; Ruben G. Carbonell
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Paper Abstract

New lithographic techniques are being implemented to help further reduce feature sizes in microelectronics. A technique for the development of standard extreme ultraviolet (EUV) photoresists in a carbon dioxide compatible salt (CCS) and supercritical carbon dioxide (scCO2) solution is being investigated to reduce line edge roughness and image collapse of high aspect ratio features.1,2 To understand the kinetics and overall mechanism of photoresist dissolution into the high pressure CCS/scCO2 solution, a quartz crystal microbalance (QCM) was previously used to measure the effects of temperature, pressure, and density on the photoresist removal rate.3,4 In this paper, the effects of a CO2 drying step before development and an adhesive coating on the photoresist removal rate and the formation of residual photoresist droplets were studied at 50°C and 5000 psi. The results implied that neither the CO2 drying step nor the HMDS coating had an effect on the bulk photoresist removal rate. It was also found that using an HMDS adhesive coating reduces residual photoresist droplet size on the substrate due to the lower substrate / photoresist surface energy.

Paper Details

Date Published: 23 March 2007
PDF: 8 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651948 (23 March 2007); doi: 10.1117/12.712093
Show Author Affiliations
Amy E. Zweber, North Carolina State Univ. (United States)
Mark Wagner, Stonelake Research Services (United States)
Ruben G. Carbonell, North Carolina State Univ. (United States)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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