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Proceedings Paper

Application of integrated scatterometry (iODP) to detect and quantify resist profile changes due to resist batch changes in a production environment
Author(s): Shahzad Ali; Linda Chen; Jason Tiffany; Anurag Yadav; Bryan Swain; David Dixon; Stephen Lickteig
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Paper Abstract

Scatterometry is currently being used in lithography production as an inline metrology tool to monitor wafer processing and detect excursions. One well-documented excursion is the process variation caused by differences in resist batches. This paper describes the use of Tokyo Electron Limited's integrated Optical Digital Profilometry (iODPTM) scatterometry system to detect process variations caused by resist batch changes. This system was able to detect a significant shift in resist sidewall angle (SWA) on an incoming resist batch that was undetected by the primary metrology in use at the time, a scanning electron microscope (CD-SEM). This SWA shift correlated to an undesirable shift in post-etch CD created by the new resist batch. Experiments performed in conjunction with the resist supplier confirmed that the normal batch-to-batch variation of a key resist component was enough to produce a change in SWA after processing. This validation led to quality improvement controls by the resist vendor and Qimonda and resulted in the use of iODP as the primary metrology for this process.

Paper Details

Date Published: 5 April 2007
PDF: 8 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65182Q (5 April 2007); doi: 10.1117/12.712085
Show Author Affiliations
Shahzad Ali, Qimonda AG (United States)
Linda Chen, Qimonda AG (United States)
Jason Tiffany, Qimonda AG (United States)
Anurag Yadav, Qimonda AG (United States)
Bryan Swain, Tokyo Electron America, Inc. (United States)
David Dixon, Tokyo Electron America, Inc. (United States)
Stephen Lickteig, Tokyo Electron America, Inc. (United States)

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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