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Proceedings Paper

EUV lithography with the Alpha Demo Tools: status and challenges
Author(s): Noreen Harned; Mieke Goethals; Rogier Groeneveld; Peter Kuerz; Martin Lowisch; Henk Meijer; Hans Meiling; Kurt Ronse; James Ryan; Michael Tittnich; Harm-Jan Voorma; John Zimmerman; Uwe Mickan; Sjoerd Lok
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Paper Abstract

ASML has built and shipped to The College of Nanoscale Science and Engineering of the University at Albany (CNSE) and IMEC two full field step-and-scan exposure tools for extreme ultraviolet lithography. These tools, known as Alpha Demo Tools (ADT), will be used for process development and to set the foundation for the commercialization of this technology. In this paper we will present results from the set-up and integration of both ADT systems, status of resist and reticles for EUV, and the plans for using these tools at the two research centers. We will also present the first resist images from one of the tools at the customer site, and demonstrate 32nm half-pitch dense lines/spaces printing as well as 32nm dense contact hole printing.

Paper Details

Date Published: 13 March 2007
PDF: 12 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651706 (13 March 2007); doi: 10.1117/12.712065
Show Author Affiliations
Noreen Harned, ASML Wilton (United States)
Mieke Goethals, IMEC (Belgium)
Rogier Groeneveld, ASML Netherlands B.V. (Netherlands)
Peter Kuerz, Carl Zeiss Semiconductor Manufacturing Technologies AG (Germany)
Martin Lowisch, Carl Zeiss Semiconductor Manufacturing Technologies AG (Germany)
Henk Meijer, ASML Netherlands B.V. (Netherlands)
Hans Meiling, ASML Netherlands B.V. (Netherlands)
Kurt Ronse, IMEC (Belgium)
James Ryan, CNSE/The Univ. at Albany (United States)
Michael Tittnich, CNSE/The Univ. at Albany (United States)
Harm-Jan Voorma, ASML Netherlands B.V. (Netherlands)
John Zimmerman, ASML Wilton (United States)
Uwe Mickan, ASML Netherlands B.V. (Netherlands)
Sjoerd Lok, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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