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Proceedings Paper

The optimization of photoresist profile for sub-90nm technology
Author(s): Haengleem Jeon; Cheonman Shim; Jiho Hong; Jaewon Han; Keeho Kim
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Paper Abstract

In this study, we have investigated the profile of ArF photo-resist patterns in order to optimize the next generation photo process of trench layer and improve their profile. In terms of resolution, PR (Photo Resist) for 193 nm (ArF) has better quality than that of 248 nm (KrF). However, there found some problems such as LER (Line Edge Roughness), top loss, sloped side wall, footing and standing wave in the aspect of PR profile. Thus, we observed the ArF PR profile which has different process condition like TBARC, SOB (Soft Bake) and PEB (Post Exposure Bake) for the profile optimization. As a result, the enhancement of sloped side wall, footing, and rounded top is obtained when the SOB and PEB temperature are tuned under the optimized condition of TBARC (BARC thickness), and TPR (PR thickness). Finally, we could set up the optimized process condition according to the result described above.

Paper Details

Date Published: 5 April 2007
PDF: 9 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184K (5 April 2007); doi: 10.1117/12.711965
Show Author Affiliations
Haengleem Jeon, Dongbu Electronics (South Korea)
Cheonman Shim, Dongbu Electronics (South Korea)
Jiho Hong, Dongbu Electronics (South Korea)
Jaewon Han, Dongbu Electronics (South Korea)
Keeho Kim, Dongbu Electronics (South Korea)

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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