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Proceedings Paper

Polymer structure modifications for immersion leaching control
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Paper Abstract

ArF Immersion lithography is the most promising technology for 45nm node and possibly beyond. However, serious issues in ArF immersion lithography for semiconductor mass production still exist. One of the issues is immersion specific defects, which are caused by photoresist component leaching and residual water droplets. In order to minimize immersion specific defects, preventing water penetration into the resist film is regarded as an important factor. Several research groups have reported that higher receding contact angle reduced defectivity. High receding contact angle of film surface prevent water penetration into the resist film due to the hydrophobic nature. Resist component leaching phenomenon also can be caused by the water penetration into the film, so hydrophobic resist can reduce leaching quantity. In this paper, to investigate chemical leaching from resist surface, we evaluated the leaching value of PAG anion and contact angles of various polymers according to their hydrophobicity. Hydrophilicity of a polymer was changed by the degree of hydrophobic group substitution to polymer chain. We measured receding contact angle with four different resists composed of water-repellent functiona group. Receding contact angle of resist surface increased as the portion of water-repellent functional group increased. Also, the leaching amount of PAG anion decreased as the receding contact angle of film surface increased. We expect that higher receding contact angle prevents chemical leaching from resist film by repelling water at the surface. We will report detailed results in this paper.

Paper Details

Date Published: 23 March 2007
PDF: 9 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651925 (23 March 2007); doi: 10.1117/12.711889
Show Author Affiliations
Sang Hyang Lee, Dongjin Semichem Co. Ltd. (South Korea)
Jung Woo Kim, Dongjin Semichem Co. Ltd. (South Korea)
Jeong Woo Kim, Dongjin Semichem Co. Ltd. (South Korea)
Seung Keun Oh, Dongjin Semichem Co. Ltd. (South Korea)
Chan Sik Park, Dongjin Semichem Co. Ltd. (South Korea)
Jung Youl Lee, Dongjin Semichem Co. Ltd. (South Korea)
Sang Soo Kim, Dongjin Semichem Co. Ltd. (South Korea)
Jae Woo Lee, Dongjin Semichem Co. Ltd. (South Korea)
Deogbae Kim, Dongjin Semichem Co. Ltd. (South Korea)
Jaehyun Kim, Dongjin Semichem Co. Ltd. (South Korea)
Keun Do Ban, Hynix Semiconductor Co., Ltd. (South Korea)
Cheol Kyu Bok, Hynix Semiconductor Co., Ltd. (South Korea)
Seung Chan Moon, Hynix Semiconductor Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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