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Proceedings Paper

Impact of illumination performance on hyper-NA imaging for 45-nm node
Author(s): Ken-Ichiro Mori; Akihiro Yamada; Takahisa Shiozawa; Kazuhiro Takahashi
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Paper Abstract

With the recent scaling down of k1 factor, the importance of illumination systems for lithographic exposure tools has been growing rapidly. This paper addresses OPC matching technology and polarized illumination that draw special attention for illuminators for 45nm node lithography applications. In the first half of the paper, OPC matching technology is reported. It is considered that less tolerance will be given to matching errors in the 45nm node and the need for matching of individual errors inherent in exposure tools may arise. In this paper, the MDI method, a method of OPC matching through direct evaluation of the effective light source, is proposed presenting its benefits. This method enables on-site accurate matching. The latter half of the paper reports on polarized illumination which is regarded as a standard technology in hyper-NA lithography regions. We have scrutinized the polarized illumination performance required to obtain excellent printing quality, and clarified polarization performance indicators that need to be assessed and controlled. As a result, it has been found that such indicators to be assessed at the mask level need to include the phase difference between the two orthogonal polarization components as well as the degree of polarization.

Paper Details

Date Published: 26 March 2007
PDF: 10 pages
Proc. SPIE 6520, Optical Microlithography XX, 652037 (26 March 2007); doi: 10.1117/12.711862
Show Author Affiliations
Ken-Ichiro Mori, Canon Inc. (Japan)
Akihiro Yamada, Canon Inc. (Japan)
Takahisa Shiozawa, Canon Inc. (Japan)
Kazuhiro Takahashi, Canon Inc. (Japan)

Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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