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Proceedings Paper

Contact leakage and open monitoring with an advanced e-beam inspection system
Author(s): Shuen-chen Lei; Hermes Liu; Mingsheng Tsai; Hung-Chi Wu; Hong Xiao; Jack Jau
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Paper Abstract

In this study, we used optimized negative mode to detect N+/P-well contact open and P+/N-well contact leakage. We found the optimized contact process condition to eliminate both contact open and leakage. Electron beam (e-beam) inspection results strongly correlate with die yield. We implemented negative mode e-beam defect inspection along with positive mode inspection for effective inline monitoring to accelerate the 65 nm process yield ramp.

Paper Details

Date Published: 5 April 2007
PDF: 6 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184I (5 April 2007); doi: 10.1117/12.711761
Show Author Affiliations
Shuen-chen Lei, United Microelectronics Corp. (Taiwan)
Hermes Liu, United Microelectronics Corp. (Taiwan)
Mingsheng Tsai, United Microelectronics Corp. (Taiwan)
Hung-Chi Wu, Hermes Microvision, Inc. (Taiwan)
Hong Xiao, Hermes Microvision, Inc. USA (United States)
Jack Jau, Hermes Microvision, Inc. USA (United States)

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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