
Proceedings Paper
Resist evaluation for contact hole patterning with thermal flow processFormat | Member Price | Non-Member Price |
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Paper Abstract
In this paper, we investigate the capabilities to form small contact holes with various 193nm
resists applying a thermal flow process. We first compare the material properties (glass
transition temperature Tg and thermal deprotection TD) of different 193nm resists to our
reference process for thermal reflow, namely the 248nm reference resist (RoR). The main
difficulty related to 193nm acrylate backbone is the high Tg value, which implies some flow
bake temperature closed to or superior to the deprotection temperature. Depending on the
resist chemistry, different behaviours have been observed such as acceleration of the flow
rate, formation of bubble defects linked to gaseous by-products or even contact hole diameter
increase. These results are strongly dependent on the chemical reactions occurring in the resist
film at the same time as the film softening. In order to better select the most promising 193nm
resist candidates for contact hole reflow technique, we also develop a polymer flow
measurement with Dynamic Mechanical Analysis (DMA). By measuring the creep
compliance of the resist film spin-coated onto a silicon wafer under various bake
temperatures, we are able to define the optimal temperature range for resist flow.
Paper Details
Date Published: 2 April 2007
PDF: 10 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193A (2 April 2007); doi: 10.1117/12.711678
Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)
PDF: 10 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193A (2 April 2007); doi: 10.1117/12.711678
Show Author Affiliations
R. Tiron, CEA, LETI (France)
C. Petitdidier, CEA, LETI (France)
C. Sourd, CEA, LETI (France)
D. De Simone, STMicroelectronics (Italy)
C. Petitdidier, CEA, LETI (France)
C. Sourd, CEA, LETI (France)
D. De Simone, STMicroelectronics (Italy)
G. Cotti, STMicroelectronics (Italy)
E. Annoni, STMicroelectronics (Italy)
B. Mortini, STMicroelectronics (France)
E. Annoni, STMicroelectronics (Italy)
B. Mortini, STMicroelectronics (France)
Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)
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