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Proceedings Paper

Optimization of DUV lithography for high-energy well implantation
Author(s): Ryan Deschner; Seong-Dong Kim; Randy Mann; Mark Stidham; Greg M. Johnson; JoAnn Rolick
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Paper Abstract

Presented here is an analysis of photoresist profile and feature control performance for high-energy well implant lithography as it is implemented in microelectronic devices, specifically SRAMs, at the 45 and 65nm nodes. As device designs become increasingly smaller to the tune of Moore's Law, deep well implant lithography specifications become more and more stringent, and issues related to lateral implant scattering that were more trivial for more relaxed designs begin to make significant contributions to photoresist feature uniformity and implant profile control. Simplified process assumptions that overlook such non-ideal implant phenomena can result in an overestimation of process latitude. Undesirable variability derived from the implantation, lithography, and substrate associated with a deep well formation process can degrade implantation profiles and have adverse effects on device electrical performance. Mechanisms for these adverse effects such as implant scattering and implant straggle will be explored followed by their relationships to process tolerance and electrical performance. Emphasis will be placed on evaluating the optimum photoresist feature profile for a given process and determining its true process latitude as opposed to "centering" a feature in a device layout during design. Finally, challenges confronting process control methods for high-aspect ratio implant mask features will be discussed followed by some proposed process improvement suggestions.

Paper Details

Date Published: 27 March 2007
PDF: 11 pages
Proc. SPIE 6520, Optical Microlithography XX, 65204K (27 March 2007); doi: 10.1117/12.711486
Show Author Affiliations
Ryan Deschner, IBM Microelectronics (United States)
Seong-Dong Kim, IBM Microelectronics (United States)
Randy Mann, IBM Microelectronics (United States)
Mark Stidham, IBM Microelectronics (United States)
Greg M. Johnson, IBM Microelectronics (United States)
JoAnn Rolick, IBM Microelectronics (United States)

Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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