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Proceedings Paper

Defectivity reduction studies for ArF immersion lithography
Author(s): Kentaro Matsunaga; Takehiro Kondoh; Hirokazu Kato; Yuuji Kobayashi; Kei Hayasaki; Shinichi Ito; Akira Yoshida; Satoru Shimura; Tetsu Kawasaki; Hideharu Kyoda
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Paper Abstract

Immersion lithography is widely expected to meet the manufacturing requirements of future device nodes. A critical development in immersion lithography has been the construction of a defect-free process. Two years ago, the authors evaluated the impact of water droplets made experimentally on exposed resist films and /or topcoat. (1) The results showed that the marks of drying water droplet called watermarks became pattern defects with T-top profile. In the case that water droplets were removed by drying them, formation of the defects was prevented. Post-exposure rinse process to remove water droplets also prevented formation of the defects. In the present work, the authors evaluated the effect of pre- and post-exposure rinse processes on hp 55nm line and space pattern with Spin Rinse Process Station (SRS) and Post Immersion Rinse Process Station (PIR) modules on an inline lithography cluster with the Tokyo Electron Ltd. CLEAN TRACKTM LITHIUS TM i+ and ASML TWINSCAN XT:1700Fi , 193nm immersion scanner. It was found that total defectivity is decreased by pre- and post-exposure rinse. In particular, bridge defects and large bridge defects were decreased by pre- and post-exposure rinse. Pre- and post-exposure rinse processes are very effective to reduce the bridge and large bridge defects of immersion lithography.

Paper Details

Date Published: 2 April 2007
PDF: 8 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65191T (2 April 2007); doi: 10.1117/12.711331
Show Author Affiliations
Kentaro Matsunaga, Toshiba Corp. (Japan)
Takehiro Kondoh, Toshiba Corp. (Japan)
Hirokazu Kato, Toshiba Corp. (Japan)
Yuuji Kobayashi, Toshiba Corp. (Japan)
Kei Hayasaki, Toshiba Corp. (Japan)
Shinichi Ito, Toshiba Corp. (Japan)
Akira Yoshida, SanDisk Corp. (Japan)
Satoru Shimura, Tokyo Electron Kyushu Ltd. (Japan)
Tetsu Kawasaki, Tokyo Electron Kyushu Ltd. (Japan)
Hideharu Kyoda, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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