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Proceedings Paper

EUV lithography program at IMEC
Author(s): Anne Marie Goethals; Rik Jonckheere; Gian Francesco Lorusso; Jan Hermans; Frieda Van Roey; Alan Myers; Manish Chandhok; Insung Kim; Ardavan Niroomand; Fumio Iwamoto; Nikolay Stepanenko; Roel Gronheid; Bart Baudemprez; Kurt Ronse
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Paper Abstract

IMEC has started an EUV lithography research program based on ASMLs EUV full field scanner, the Alpha Demo Tool (ADT). Currently, the ADT is in the final phase of installation. The program focuses on three main projects: EUV resists, EUV reticles and assessment of the ADT performance. The intent of this program is to help improve and establish the necessary mask and resist infrastructure. In this paper, the status and the progress of the program is reviewed. In preparation for a resist process for the ADT, interference lithography has been used to track the progress of resist performance. Steady progress in resist development is seen, especially in terms of resolution, as some materials are now able to resolve 25nm HP. In its initial phase, the reticle project has concentrated on working with the mask and blank suppliers to assure timely availability of reticles for the ADT. An overview is given of the other reticle related activities, as well as first results of a defect printability study by simulation. In the ADT assessment project, simulation studies are reported aimed at the development of optical correction for flare and reticle shadowing effects. The impact of flare and shadowing effects are well understood and strategies for flare mitigation and shadowing effect correction are proposed.

Paper Details

Date Published: 13 March 2007
PDF: 12 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651709 (13 March 2007); doi: 10.1117/12.710798
Show Author Affiliations
Anne Marie Goethals, IMEC (Belgium)
Rik Jonckheere, IMEC (Belgium)
Gian Francesco Lorusso, IMEC (Belgium)
Jan Hermans, IMEC (Belgium)
Frieda Van Roey, IMEC (Belgium)
Alan Myers, Intel Corp. (United States)
Manish Chandhok, Intel Corp. (United States)
Insung Kim, Samsung Electronics (South Korea)
Ardavan Niroomand, Micron Technology (United States)
Fumio Iwamoto, Matsushita Electric Industrial Co., Ltd. (Japan)
Nikolay Stepanenko, Qimonda (United States)
Roel Gronheid, IMEC (Belgium)
Bart Baudemprez, IMEC (Belgium)
Kurt Ronse, IMEC (Belgium)

Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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