
Proceedings Paper
Diode pumped Nd:YGG laser for direct generation of pulsed 935-nm radiation for water vapour measurementsFormat | Member Price | Non-Member Price |
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Paper Abstract
A resonator setup applying a double-sided diode end-pumped configuration and an electro-optical Q-switch for efficient
generation of 4 mJ pulses (< 60 ns fwhm) at 935 nm from Nd:YGG is presented, to our knowledge for the first time. The
optical-optical efficiency is 9 % (absorbed pump light to laser out). High quality crystals have been investigated,
showing high damage threshold, high efficiency and good optical properties permitting Q-switched mode of operation.
Experimental small signal gain data coincide with spectroscopic measurements. For vapour detection frequency stable
single mode operation is required. Injection seeding with a single frequency cw-signal has been successfully achieved.
Frequency control mechanisms are currently under investigation. The direct generation of 935 nm radiation simplifies
future LIDAR systems significantly compared to current approaches based on OPO, Raman or Ti:Sapphire technology.
Paper Details
Date Published: 19 February 2007
PDF: 8 pages
Proc. SPIE 6451, Solid State Lasers XVI: Technology and Devices, 64510I (19 February 2007); doi: 10.1117/12.708220
Published in SPIE Proceedings Vol. 6451:
Solid State Lasers XVI: Technology and Devices
Hanna J. Hoffman; Ramesh K. Shori; Norman Hodgson, Editor(s)
PDF: 8 pages
Proc. SPIE 6451, Solid State Lasers XVI: Technology and Devices, 64510I (19 February 2007); doi: 10.1117/12.708220
Show Author Affiliations
J. Löhring, Fraunhofer-Institut for Laser Technology (Germany)
K. Nicklaus, Fraunhofer-Institut for Laser Technology (Germany)
K. Nicklaus, Fraunhofer-Institut for Laser Technology (Germany)
N. Kujath, Fraunhofer-Institut for Laser Technology (Germany)
D. Hoffmann, Fraunhofer-Institut for Laser Technology (Germany)
D. Hoffmann, Fraunhofer-Institut for Laser Technology (Germany)
Published in SPIE Proceedings Vol. 6451:
Solid State Lasers XVI: Technology and Devices
Hanna J. Hoffman; Ramesh K. Shori; Norman Hodgson, Editor(s)
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