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AlGaN/GaN MOS transistors using crystalline ZrO2 as gate dielectric
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Paper Abstract

Epitaxial growth of ZrO2 has been achieved on MOCVD-grown GaN(0001) templates by oxides molecular beam epitaxy using reactive H2O2 for oxygen and organometallic source for Zr. Utilizing a low temperature buffer layer followed by high temperature insitu annealing and high-temperature growth, monoclinic (100)-oriented ZrO2 thin films were obtained. The full width at half maximum of ZrO2 (100) rocking curve was 0.4 arc degree for 30-nm-thick films and the rms roughness for a 5&mgr;m by 5 &mgr;m AFM scan was 4 Å. The employment of epitaxial ZrO2 layer in the AlGaN/GaN heterojunction field effect trasnsistor as a gate dielectric has resulted in the increase of the saturation-current density and pinch-off voltage as well as in near symmetrical gate-drain I-V behavior.

Paper Details

Date Published: 8 February 2007
PDF: 8 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730S (8 February 2007); doi: 10.1117/12.706808
Show Author Affiliations
Xing Gu, Virginia Commonwealth Univ. (United States)
Natalia Izyumskaya, Virginia Commonwealth Univ. (United States)
Vitaly Avrutin, Virginia Commonwealth Univ. (United States)
Jinqiao Xie, Virginia Commonwealth Univ. (United States)
Serguei Chevtchenko, Virginia Commonwealth Univ. (United States)
Bo Xiao, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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