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Proceedings Paper

Influence of annealing in oxygen ambient on crystal properties of rf-sputtered PZT layers on ZnO substrates
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Paper Abstract

Lead zirconate titanate PbZr52Ti48O3 (PZT) layers were deposited on ZnO layers by rf-sputtering at varying substrate temperatures. The effect of annealing on PZT crystal properties has been studied by X-ray diffraction and atomic force microscopy. It is shown that the annealing in oxygen ambient has significant effect on the quality of the deposited PZT layers. The optimum growth temperature has been found to be 650 C.

Paper Details

Date Published: 20 February 2007
PDF: 5 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64741B (20 February 2007); doi: 10.1117/12.706506
Show Author Affiliations
Ya. I. Alivov, Virginia Commonwealth Univ. (United States)
F. Agra, Virginia Commonwealth Univ. (United States)
B. Xiao, Virginia Commonwealth Univ. (United States)
S. Chevtchenko, Virginia Commonwealth Univ. (United States)
C. Litton, Air Force Research Lab. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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