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Proceedings Paper

The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds
Author(s): T. Suski; G. Franssen; A. Kamińska; A. Khachapuridze; H. Teisseyre; J. A. Plesiewicz; L. H. Dmowski; H. Lu; W. J. Schaff; M. Kurouchi; Y. Nanishi
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Paper Abstract

We discuss the influence of indium segregation-induced disorder effects in InxGa1-xN alloys. Changes of the transport mechanism between InN and InxGa1-xN with x=0.58 were demonstrated by means of temperature-dependent conductivity measurements. Furthermore, an increase of (i) full width at half maximum of photoluminescence (PL) and (ii) the Stokes shift between PL and absorption was seen for samples approaching an In content of 0.5, which can also be attributed to growing disorder. Hydrostatic pressure dependent PL measurements of In-rich InGaN alloys are diacussed. Due to the fact that PL in InGaN originates from regions with higher-than-average In content, the luminescence pressure coefficient dEE/dp should not be associated with the average In content, but with the In content which is in accordance with the energy of the photon emission. This correction leads to a reduction of the large bowing of dEE/dp (associated with the band gap) which was reported earlier. Furthermore, it is shown that the electron concentration in InN has a significant influence on the measured value of dEE/dp.

Paper Details

Date Published: 8 February 2007
PDF: 7 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647311 (8 February 2007); doi: 10.1117/12.705563
Show Author Affiliations
T. Suski, Institute of High Pressure Physics Unipress (Poland)
G. Franssen, Institute of High Pressure Physics Unipress (Poland)
A. Kamińska, Institute of Physics (Poland)
A. Khachapuridze, Institute of High Pressure Physics Unipress (Poland)
H. Teisseyre, Institute of High Pressure Physics Unipress (Poland)
J. A. Plesiewicz, Institute of High Pressure Physics Unipress (Poland)
L. H. Dmowski, Institute of High Pressure Physics Unipress (Poland)
H. Lu, Cornell Univ. (United States)
W. J. Schaff, Cornell Univ. (United States)
M. Kurouchi, Ritsumeikan Univ. (Japan)
Y. Nanishi, Ritsumeikan Univ. (Japan)

Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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