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Proceedings Paper

A novel process of etching EUV masks for future generation technology
Author(s): Banqiu Wu; Ajay Kumar; Madhavi Chandrachood; Ibrahim Ibrahim; Amitabh Sabharwal
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Paper Abstract

Studies on pattern transfer of next generation lithographic (EUV) photomask were carried out. Based on current absorber layer material candidates, thermodynamic calculations were performed and plasma etch gas system and composition were investigated. The gas systems have the advantage of all etch products being in volatile condition. This is helpful to keep the etch process and etch chamber clean. For etch CD bias challenge in EUV photomask etch, self-mask concept was investigated, which makes anti-reflective (AR) sub-layer of the absorber layer function as a hard mask for the bulk absorber layer beneath. It significantly reduces etch CD bias and improves pattern transfer fidelity. For common candidates of EUV mask absorber layers such as TaBO/TaBN and TaSiON/TaSi, reactive gas systems were proposed according to thermodynamic calculations with all products volatile. AR sub-layers were etched in one gas composition with volatiles. Once the AR sub-layer is etched through, gas composition was changed so that the bulk absorber sub-layer beneath is etched selectively with volatile products. Excellent results in profiles, CD bias, CD uniformity, and underneath buffer/capping layer impact have been demonstrated.

Paper Details

Date Published: 20 October 2006
PDF: 8 pages
Proc. SPIE 6349, Photomask Technology 2006, 634909 (20 October 2006); doi: 10.1117/12.705403
Show Author Affiliations
Banqiu Wu, Applied Materials, Inc. (United States)
Ajay Kumar, Applied Materials, Inc. (United States)
Madhavi Chandrachood, Applied Materials, Inc. (United States)
Ibrahim Ibrahim, Applied Materials, Inc. (United States)
Amitabh Sabharwal, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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