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Proceedings Paper

Development of amorphous SiC for MEMS-based microbridges
Author(s): James B. Summers; Maximilian Scardelletti; Rocco Parro; Christian A. Zorman
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Paper Abstract

This paper reports our effort to develop amorphous hydrogenated silicon carbide (a-SiC:H) films specifically designed for MEMS-based microbridges using methane and silane as the precursor gases. In our work, the a-SiC:H films were deposited in a simple, commercial PECVD system at a fixed temperature of 300°C. Films with thicknesses from 100 nm to 1000 nm, a typical range for many MEMS applications, were deposited. Deposition parameters such as deposition pressure and methane-to-silane ratio were varied in order to obtain films with suitable residual stresses. Average residual stress in the as-deposited films selected for device fabrication was found by wafer curvature measurements to be -658 ± 22 MPa, which could be converted to 177 ± 40 MPa after thermal annealing at 450°C, making them suitable for micromachined bridges, membranes and other anchored structures. Bulk micromachined membranes were constructed to determine the Young's modulus of the annealed films, which was found to be 205 ± 6 GPa. Chemical inertness was tested in aggressive solutions such as KOH and HF. Prototype microbridge actuators were fabricated using a simple surface micromachining process to assess the potential of the a-SiC:H films as structural layers for MEMS applications.

Paper Details

Date Published: 12 February 2007
PDF: 12 pages
Proc. SPIE 6464, MEMS/MOEMS Components and Their Applications IV, 64640H (12 February 2007); doi: 10.1117/12.704705
Show Author Affiliations
James B. Summers, Case Western Reserve Univ. (United States)
Maximilian Scardelletti, NASA Glenn Research Ctr. (United States)
Rocco Parro, Case Western Reserve Univ. (United States)
Christian A. Zorman, Case Western Reserve Univ. (United States)

Published in SPIE Proceedings Vol. 6464:
MEMS/MOEMS Components and Their Applications IV
Srinivas A. Tadigadapa; Reza Ghodssi; Albert K. Henning, Editor(s)

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