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Proceedings Paper

Characteristics of InAs/InGaAsP quantum dot laser diodes lasing at 1.55um
Author(s): Eungu Lee; Yudong Jang; Namje Kim; Donghan Lee; Suhyun Pyun; Deokgil Ko; Juhyung Yoon; Weonguk Jeong; Jongwon Jang
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Paper Abstract

We have measured I-V, L-I curves and electroluminescence spectra from InAs/InGaAsP quantum dot (QD) laser diodes (LDs) to investigate how to optimize QD LDs for high output power. The slope of an L-I curve, which is proportional to the differential quantum efficiency, decreased rapidly after lasing due to heat in cw mode. Since the heat problem is not significant in pulse mode, the efficiency is constant up to a rather high current level. In spite of the heat problem, the maximum output power is over 79 mW from a single facet in cw mode at 20 °C. At the same temperature, the lowest threshold current is 132 mA with cavity length, width and QD layers of 500 um, 5 um and 7 stacks, respectively. The characteristic temperatures of QD LD are 188 K and 111 K under pulse and cw mode, respectively. Typical lasing wavelength is around 1.55 um. The slope efficiency, internal loss and gain are 0.368 W/A, 5.2 cm-1 and 15 cm-1, respectively.

Paper Details

Date Published: 8 February 2007
PDF: 6 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850K (8 February 2007);
Show Author Affiliations
Eungu Lee, Chungnam National Univ. (South Korea)
Yudong Jang, Chungnam Nationa Univ. (South Korea)
Namje Kim, Chungnam National Univ. (South Korea)
Donghan Lee, Chungnam National Univ. (South Korea)
Suhyun Pyun, Sungkyunkwan Univ. (South Korea)
Deokgil Ko, Sungkyunkwan Univ. (South Korea)
Juhyung Yoon, Sungkyunkwan Univ. (South Korea)
Weonguk Jeong, Sungkyunkwan Univ. (South Korea)
Jongwon Jang, NanoEpi Technologies Corp. (South Korea)


Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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