Share Email Print

Proceedings Paper

Simulation of p-n junction properties of nanowires and nanowire arrays
Author(s): Jun Hu; Yang Liu; Alex Maslov; Cun-Zheng Ning; Robert Dutton; Sung-Mo Kang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The unique properties of semiconductor nanowires pose promising applications in optoelectronics such as photo-detectors and lasers. Owing to the increased surface/volume ratio, nanowire-based p-n junctions exhibit qualitatively different properties from those of bulk cases. These include weaker electrostatic screening and stronger fringe field effects. This work employs a general device simulator, PROPHET, to numerically investigate the unique electrical properties of p-n junctions in single nanowires and nanowire arrays. The implications of such effects in nanowire-based photo-detector design are also examined.

Paper Details

Date Published: 22 March 2007
PDF: 7 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64681E (22 March 2007); doi: 10.1117/12.701210
Show Author Affiliations
Jun Hu, Univ. of California/Santa Cruz (United States)
Yang Liu, Stanford Univ. (United States)
Alex Maslov, NASA Ames Research Ctr. (United States)
Cun-Zheng Ning, NASA Ames Research Ctr. (United States)
Arizona State Univ. (United States)
Robert Dutton, Stanford Univ. (United States)
Sung-Mo Kang, Univ. of California/Santa Cruz (United States)

Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?