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Proceedings Paper

The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes
Author(s): Wei-Jen Chen; Da-Chuan Kuo; Cheng-Wei Hung; Chih-Chun Ke; Hui-Tang Shen; Jen-Cheng Wang; Ya-Fen Wu; Tzer-En Nee
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Paper Abstract

In this work, thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30oC to 100oC. The current-dependent electroluminescence (EL) spectra, current-voltage (I-V) curves and luminescence-current (L-I) curve have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW heterostructures. Experimentally, both the forward voltages decreased with slope of -2.6 mV/K and the emission peak wavelength increased with slope of +4.5 nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the band gap shrinkage effect. With increasing injection current, it has been found the strong current-dependent blueshift of -0.048 nm/mA in EL spectra. It was attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect, resulted from the piezoelectric polarization and the spontaneous polarization in InGaN/GaN heterostructures. The junction temperature calculated by forward voltage was from 25.6 to 14.5oC and by emission peak shift was from 22.4 to 35.6oC.

Paper Details

Date Published: 7 February 2007
PDF: 7 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680T (7 February 2007); doi: 10.1117/12.700447
Show Author Affiliations
Wei-Jen Chen, Chang Gung Univ. (Taiwan)
Da-Chuan Kuo, Chang Gung Univ. (Taiwan)
Cheng-Wei Hung, Chang Gung Univ. (Taiwan)
Chih-Chun Ke, Chang Gung Univ. (Taiwan)
Hui-Tang Shen, Chang Gung Univ. (Taiwan)
Jen-Cheng Wang, Chang Gung Univ. (Taiwan)
Ya-Fen Wu, Chang Gung Univ. (Taiwan)
Tzer-En Nee, Chang Gung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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