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Proceedings Paper

Implications of injection current and optical input power on the performance of reflective semiconductor optical amplifiers
Author(s): Ning Cheng; Leonid G. Kazovsky
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Paper Abstract

A time domain model for reflective semiconductor optical amplifiers (RSOAs) is developed based on the carrier rate equation and wave propagation equation. In this model, the gain saturation effect and the dependence of spontaneous carrier lifetime on carrier density are explicitly included, and the evolution of carrier density and the optical power in time and space under current modulation is considered in detail. Using the time domain model, the performance of RSOAs with different active layer lengths is investigated under different inject current densities and input optical powers. Numerical simulations reveal that the carrier spontaneous lifetime is the foremost limiting factor of RSOA modulation speed, but increasing photon density improves RSOA performance. With increased bias currents or optical input powers, the small signal frequency response is improved and the eye closure penalty under large signal on-off key modulation is reduced, but the extinction ratio of the optical output signal is decreased. Under the same bias current density and optical input power, RSOAs with longer active layers exhibit improved frequency response and smaller eye closure penalty.

Paper Details

Date Published: 7 February 2007
PDF: 12 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680V (7 February 2007);
Show Author Affiliations
Ning Cheng, Stanford Univ. (United States)
Leonid G. Kazovsky, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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