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Proceedings Paper

Narrow-width photoluminescence spectra of InGaN quantum wells grown on GaN (0001) substrates with misorientation toward [1100] direction
Author(s): Koichi Tachibana; Hajime Nago; Shin-ya Nunoue
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Paper Abstract

The optical properties of InGaN quantum wells on misoriented GaN (0001) substrates were investigated. The fluctuation of peak wavelength and full width at half maximum of micro-photoluminescence from InGaN quantum wells was large when the misorientation angle was 0.0o. The micro-photoluminescence showed narrow-width spectra, with full width at half maximum below 60 meV, of InGaN quantum wells grown on GaN (0001) substrates with a misorientation angle of around 0.28o toward [11-00] direction. These results indicate that InGaN quantum wells have high crystalline quality when InGaN quantum wells are grown with misorientation angle between 0.2o and 0.3o toward [11-00] direction.

Paper Details

Date Published: 8 February 2007
PDF: 7 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647307 (8 February 2007); doi: 10.1117/12.699662
Show Author Affiliations
Koichi Tachibana, Toshiba Corp. (Japan)
Hajime Nago, Toshiba Corp. (Japan)
Shin-ya Nunoue, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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