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Proceedings Paper

Si/Ge platform for lasers, amplifiers, and nonlinear optical devices based on the Raman effect
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Paper Abstract

The use of a silicon-germanium platform for the development of optically active devices will be discussed in this paper, from the perspective of Raman and Brillouin scattering phenomena. Silicon-Germanium is becoming a prevalent technology for the development of high speed CMOS transistors, with advances in several key parameters as high carrier mobility, low cost, and reduced manufacturing logistics. Traditionally, Si-Ge structures have been used in the optoelectronics arena as photodetectors, due to the enhanced absorption of Ge in the telecommunications band. Recent developments in Raman-based nonlinearities for devices based on a silicon-on-insulator platform have shed light on the possibility of using these effects in Si-Ge architectures. Lasing and amplification have been demonstrated using a SiGe alloy structure, and Brillouin/Raman activity from acoustic phonon modes in SiGe superlattices has been predicted. Moreover, new Raman-active branches and inhomogeneously broadened spectra result from optical phonon modes, offering new perspectives for optical device applications. The possibilities for an electrically-pumped Raman laser will be outlined, and the potential for design and development of silicon-based, Tera-Hertz wave emitters and/or receivers.

Paper Details

Date Published: 8 February 2007
PDF: 12 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648510 (8 February 2007); doi: 10.1117/12.699524
Show Author Affiliations
Ricardo Claps, Neptec Optical Solutions (United States)
Dimitrios Dimitropoulos, Univ. of California, Los Angeles (United States)
Varun Raghunathan, Univ. of California, Los Angeles (United States)
Sasan Fathpour, Univ. of California, Los Angeles (United States)
Bahram Jalali, Univ. of California, Los Angeles (United States)
Bernard Jusserand, Univ. Pierre et Marie Curie (France)


Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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