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Proceedings Paper

Toward an AlGaAsSb/GaInAsSb/GaSb laser emitting beyond 3µm
Author(s): Julie Angellier; David Barat; Guilhem Boissier; France Chevier; Pierre Grech; Yves Rouillard
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Paper Abstract

We have made quantum wells laser diodes by Molecular Beam Epitaxy with emission wavelengths from 2.3 &mgr;m to 3.1 &mgr;m. With growing wavelength, threshold current densities increase almost exponentially. We obtained threshold values as low as 65 A/cm2 at 2.3 &mgr;m and 156 A/cm2 at 2.62 &mgr;m. At the same time, the valence-band offset decrease from 132 meV (at 2.3 &mgr;m) to 78 meV (at 2.6 &mgr;m). A threshold current density study shows that Auger effect is not the only responsible for the augmentation of Jth. The reduction of internal efficiency ηi has a greater impact on the increase of Jth. The diminution of the holes confinement is incriminated for the degradation of ηi with growing wavelength. Therefore, to improve Jth at higher wavelengths another kind of barrier has to be utilized (for example, thanks to the use of the quinary material AlGaInAsSb).

Paper Details

Date Published: 8 February 2007
PDF: 11 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850B (8 February 2007); doi: 10.1117/12.698151
Show Author Affiliations
Julie Angellier, Institut d’Electronique du Sud (France)
David Barat, Institut d’Electronique du Sud (France)
Guilhem Boissier, Institut d’Electronique du Sud (France)
France Chevier, Institut d’Electronique du Sud (France)
Pierre Grech, Institut d’Electronique du Sud (France)
Yves Rouillard, Institut d’Electronique du Sud (France)

Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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